Accurate Measurement of Defect Generation Rates in Silicon Carbide Irradiated with Energetic Ions

Linxin Guo; Shengyuan Peng; Yong Liu; Shang Tian; Wei Zhou; Hao Wang; Jianming Xue

doi:10.1021/acsomega.3c07568

Accurate Measurement of Defect Generation Rates in Silicon Carbide Irradiated with Energetic Ions

ACS Omega. 2023 Oct 30;8(44):41977-41982. doi: 10.1021/acsomega.3c07568. eCollection 2023 Nov 7.

Authors

Linxin Guo¹, Shengyuan Peng¹, Yong Liu¹, Shang Tian¹, Wei Zhou², Hao Wang², Jianming Xue^{1

3}

Affiliations

¹ State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University, Beijing 100871, P. R. China.
² Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang 621999, P. R. China.
³ CAPT, HEDPS, and IFSA, College of Engineering, Peking University, Beijing 100871, P. R. China.

Abstract

In this work, we obtained the Si vacancy generation rates η in SiC nanowire samples irradiated with 1, 3 MeV protons, and 2.8 MeV helium ions using the electrical resistivity measurement, which further indicated an intuitive linear function correlation between η and the nuclear stopping power of the incident ions at a low dpa level with a coefficient of 2.15 × 10^-3 eV^-1. Prediction through this correlation is consistent with previous work. Besides, the measured value is about 1/2 of the simulation results with the popular SRIM code. Overall, our work provides a feasible way to get the generation rate of a certain irradiation-induced defect by electric measurements, and the correlation obtained is practically useful in various applications.