Poly(3-hexylthiophene) is one of the most prevalent and promising conjugated polymers for use in organic electronics. However, the deposition of this material in thin films is highly dependent on the process, such as blade coating versus spin coating and material properties such as molecular weight. Typically, large polymer dispersity makes it difficult to isolate the effect of molecular weight without considering a distribution. In this study, we characterize oligothiophenes of exactly 8, 11, and 14 repeat units, which were deposited into thin films by varying blade coating conditions and postdeposition annealing. From synchrotron-based grazing incidence wide-angle X-ray scattering (GIWAXS), scanning transmission X-ray microscopy (STXM) and near-edge X-ray absorption fine structure spectroscopy (NEXAFS), Raman microscopy, optical microscopy, and X-ray diffraction (XRD), it was suggested that higher molecular weight polymers exhibit a fast-forming crystalline polymorph (form-1) while low molecular weight polymers exhibit a slow forming polymorph (form-2) with large domain boundaries. As molecular weight is gradually increased, the polymorph formed transitions from form-1 and form-2, where 11 repeat unit oligomers display both polymorphs. We also found that processing conditions can increase the formation of the form-2 polymorph. We also report improved organic thin film transistor (OTFT) performance when form-1 is present. Overall, oligothiophene polymorph formation is highly dependent on the molecular weight and processing conditions, providing critical insight into the importance of polymer weight control in the development of thin-film electronics based on conjugated polymers.
Keywords: P3HT; microstructure; organic semiconductor; solution processing; thin-film.