We propose and demonstrate that temperature-dependent curve-fitting error values of the Schottky diode I-V curve in the forward regime can be an auxiliary diagnostic signal as the temperature-scan Capacitance DLTS (CDLTS) signals and helps to work time-efficiently with high accuracy when using the Laplace Transform (LT)-DLTS or Isothermal Capacitance transient spectroscopy (ICTS) method. Using Be-doped GaAs showing overlapping DLTS signals, we verify that the LT-DLTS or ICTS analysis within a specific temperature range around the characteristic temperature Tpeak coincides well with the results of the CDLTS and Fourier Transform DLTS performed within the whole temperature range. In particular, we found that the LT-DLTS signals appeared intensively around Tpeak, and we confirmed it with the ICTS result. The occurrence of the curve fitting error signal is attributed to the relatively increased misfit error by the increased thermal emission from the deep-level trap in the case near the Tpeak, because the applied transport model excludes defect characteristics.
Keywords: I–V curve fitting; deep-level transient spectroscopy.