Grain-size adjustment in Hf0.5Zr0.5O2ferroelectric film to improve the switching time in Hf0.5Zr0.5O2-based ferroelectric capacitor

Jiyeong Yoon; Yejoo Choi; Changhwan Shin

doi:10.1088/1361-6528/ad0af8

Grain-size adjustment in Hf_0.5Zr_0.5O₂ferroelectric film to improve the switching time in Hf_0.5Zr_0.5O₂-based ferroelectric capacitor

Nanotechnology. 2024 Jan 10;35(13). doi: 10.1088/1361-6528/ad0af8.

Authors

Jiyeong Yoon¹, Yejoo Choi², Changhwan Shin¹

Affiliations

¹ School of Electrical Engineering, Korea University, Seoul 02841, Republic of Korea.
² Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea.

PMID: 37939482
DOI: 10.1088/1361-6528/ad0af8

Abstract

By adjusting the rising time in annealing ferroelectric HfO₂-based films, the grain size of the film can be controlled. In this study, we found that increasing the rising time from 10 to 30 s at an annealing temperature of 700 °C in N₂atmosphere resulted in improved ferroelectric switching speed. This is because the larger grain size reduces the internal resistance components, such as the grain bulk resistance and grain boundary resistance, of the HZO film. This in turn lowers the overall equivalent resistance. By minimizing the RC time constants, increasing the grain size plays a key role in improving the polarization switching speed of ferroelectric films.

Keywords: ferroelectric film; grain size; polarization switching speed; rapid thermal annealing.