We report the local surface potential mapping of pentacene film prepared by physical vapor deposition with scanning kelvin probe microscopy where the sample is scanned under different gate voltages. Surface topography and the corresponding potential maps were obtained simultaneously. Spatial distribution of the surface potential at a low gate voltage is clearly correlated with topographic features. A lower electrostatic potential was measured at the grain boundaries (GBs), suggesting that GBs behave as hole traps. This observation is bolstered by conductive atomic force microscopy (C-AFM) data, which reveals a higher conductivity within the grains as opposed to the GBs. An increase in gate voltage minimizes the potential differences at the grain and GBs, suggesting a modification in trap occupancy. We expect that these experimental results, along with existing theories, will provide a better understanding of the microstructural-electrical properties of pentacene film. RESEARCH HIGHLIGHTS: Local surface potential mapping of pentacene film with scanning kelvin probe microscopy. Correlation between the surface potential map and topography at a low gate voltage. Decrease of the potential distribution inhomogeneity by the gate voltage increasement. Higher conductivity at inner grain than grain boundary in conductive atomic force microscopy.
Keywords: conductive atomic force microscopy (C-AFM); gate bias; pentacene; scanning kelvin probe microscopy (SKPM); topography.
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