Robust photogalvanic effect, full spin polarization and pure spin current in the BiC photodetector by vacancy- and substitution-doping

Xi Fu; Jian Lin; Chaozheng He; Wenhu Liao; Jiyuan Guo; Xiaowu Li; Haixia Gao

doi:10.1088/1361-6528/ad090b

Robust photogalvanic effect, full spin polarization and pure spin current in the BiC photodetector by vacancy- and substitution-doping

Nanotechnology. 2023 Nov 2. doi: 10.1088/1361-6528/ad090b. Online ahead of print.

Authors

Xi Fu¹, Jian Lin², Chaozheng He³, Wenhu Liao², Jiyuan Guo⁴, Xiaowu Li⁵, Haixia Gao⁶

Affiliations

¹ Department of Science, Hunan University of Science and Engineering, Hunan University of Science and Engineering, Yongzhou, 425100, CHINA.
² Department of Physics, Jishou University, Jishou University, Jishou, 416000, CHINA.
³ Xi'an Technological University, Xi'an Technological University, Xi'an, 710021, CHINA.
⁴ Jiangsu University of Science and Technology, Jiangsu University of Science and Technology, Zhenjiang, 212013, CHINA.
⁵ Hunan University of Science and Engineering, Hunan University of Science and Engineering, Yongzhou, Hunan, 425100, CHINA.
⁶ Hunan University of Science and Engineering, Hunan University of Science and Engineering, Yongzhou, 425100, CHINA.

PMID: 37918018
DOI: 10.1088/1361-6528/ad090b

Abstract

The photogalvanic effects (PGEs) in low-dimensional devices have attracted great interests recently. Herein, based on non-equilibrium Green's function combined with density functional theory, we investigated spin-dependent PGE phenomena in the BiC photodetector for the case of linearly polarized light and zero bias. Due to the presence of strong spin-orbital interaction (SOI) and C3v symmetry for the BiC monolayer, the armchair and zigzag BiC photodetectors produce robust spin-dependent PGEs which possess the cos(2θ) and sin(2θ) relations on the photon energies. Especially, the armchair and Bi-vacancy armchair BiC photodetector can produce fully spin polarization, and pure spin current was found in the armchair and zigzag BiC photodetector. Furthermore, after introducing the Bi-vacancy, C-vacancy, Bi-doping and C-doping respectively, corresponding armchair and zigzag BiC photodetector can produce higher spin-dependent PGEs for their Cs symmetry. Moreover, the behaviors of spin-dependent photoresponse are highly anisotropic and can be tuned by the photon energy. This work suggested great potential applications of the BiC monolayer on PGE-driven photodetectors in low energy-consumption optoelectronics and spintronic devices.&#xD.

Keywords: BiC Monolayer; First-principles Calculation; Photodetector; Photogalvanic effect.