Glassy GeS2, densified at 8.3 GPa, exhibits a strongly reduced bandgap, predominantly tetrahedral Ge environment, enhanced chemical disorder and partial 3-fold coordination of both germanium and sulfur, assuming two possible reaction paths under high pressure: (i) a simple dissociation 2Ge-S ⇄ Ge-Ge + S-S and (ii) a chemical disproportionation GeS2 ⇄ GeS + S. The observed electronic and structural changes remain intact for at least seven years under ambient conditions but are gradually evolving upon heating. The relaxation kinetics at elevated temperatures, up to the glass transition temperature Tg, suggests that complete recovery of the densified glassy GeS2 over a typical operational T-range of optoelectronic devices will take many thousands of years. The observed logarithmic relaxation and nearly infinite recovery time at room temperature raise questions about the nature of millennia-long phenomena in densified GeS2. Two alternative explanations will be discussed: (1) hidden polyamorphism and (2) continuous structural and chemical changes under high pressure. These investigations offer valuable insights into the behavior of glassy GeS2 under extreme conditions and its potential applications in optoelectronic devices and other advanced technologies.