Ultra-Broadband High-Entropy Oxide Absorber Layer for Enhanced Photodetector Performance

ACS Appl Mater Interfaces. 2023 Oct 31. doi: 10.1021/acsami.3c09879. Online ahead of print.

Abstract

A novel light-absorbing material of high-entropy oxide (HEO) has been synthesized using the hydrothermal method. The HEO has six metals, namely, Fe, Ni, Mn, Cr, Mg, and Cu. The obtained HEO light absorber is demonstrated to show unprecedented broadband absorption, ranging from 310 to 1400 nm. The photodetector having a structure of Ag/HEO/n-Si has been evaluated for its performance. Under the illumination of various light wavelengths, the photodetector exhibits a remarkably wide range of photoresponse from 365 to 1050 nm, giving wide-spectrum photocurrent densities in the order of 1 mA/cm2, a responsibility as high as 3.5 A/W (850 nm), and an external quantum efficiency (EQE) of more than 700% (850 nm), outperforming all of the reported oxide-based photodetectors. The superior device performance is attributed to the excellent light absorbance and EQE of the oxygen vacancy-containing HEO. Moreover, a number of tests, including the abrasion test, temperature endurance, acidic resistance, on-off switching cycling, and 3 dB bandwidth measurement, show the excellent reliability of the obtained HEO-based photodetector.

Keywords: UV−vis−NIR; broadband; high-entropy oxide; multielements; photodetector.