Cu2O microcrystals are electrodeposited on an epitaxial GaN layer on a Si(111) substrate to improve the solar water splitting efficiency of a GaN photoanode. The performance of the GaN/Cu2O composite junction photoanode is investigated as a function of the Cu2O deposition amount for Cu2O microcrystal formation. For optimum Cu2O deposition amount, the photocurrent density is significantly enhanced compared to that of the bare GaN photoanode. The improved water splitting performance is attributed to the built-in electric field and band offsets of the n-GaN/p-Cu2O heterostructure, promoting the separation of photogenerated electrons and holes and the transport of the hole to the surface.