A 37-40 GHz 6-Bits Switched-Filter Phase Shifter Using 150 nm GaN HEMT

Jae-Hyeok Song; Eun-Gyu Lee; Jae-Eun Lee; Jeong-Taek Son; Joon-Hyung Kim; Min-Seok Baek; Choul-Young Kim

doi:10.3390/nano13202752

A 37-40 GHz 6-Bits Switched-Filter Phase Shifter Using 150 nm GaN HEMT

Nanomaterials (Basel). 2023 Oct 12;13(20):2752. doi: 10.3390/nano13202752.

Authors

Jae-Hyeok Song¹, Eun-Gyu Lee¹, Jae-Eun Lee¹, Jeong-Taek Son¹, Joon-Hyung Kim¹, Min-Seok Baek¹, Choul-Young Kim¹

Affiliation

¹ Department of Electronics Engineering, Chungnam National University, Daejeon 34134, Republic of Korea.

Abstract

In this paper, we present a 6-bit phase shifter designed and fabricated using the 150 nm GaN HEMT process. The designed phase shifter operates within the n260 (37~40 GHz) band, as specified in the 5G NR standard, and employs the structure of a switched-filter phase shifter. By serially connecting six single-bit phase shifters, ranging from 180° to 5.625°, the designed phase shifter achieves a phase range of 360°. The fabricated phase shifter exhibits a minimum insertion loss of 5 dB and an RMS phase error of less than 5.36° within the 37 to 40 GHz. This phase shifter is intended for seamless integration with high-power RF circuits.

Keywords: 5G NR (n260); GaN HEMT; STPS; T-type filter; phase shifter.

Grants and funding

This research received no external funding.