Ultrasensitive and Robust CsPbBr3 Single-Crystal X-ray Detectors Based on Interface Engineering

Zhilong Chen; Hu Wang; Fenghua Li; Wenqing Zhang; Yuchuan Shao; Shuang Yang

doi:10.1021/acsami.3c11409

Ultrasensitive and Robust CsPbBr₃ Single-Crystal X-ray Detectors Based on Interface Engineering

ACS Appl Mater Interfaces. 2023 Oct 26. doi: 10.1021/acsami.3c11409. Online ahead of print.

Authors

Zhilong Chen^{1

2

3}, Hu Wang^{2

4

3}, Fenghua Li^{2

3}, Wenqing Zhang^{2

4

3}, Yuchuan Shao^{2

4

3

5}, Shuang Yang¹

Affiliations

¹ Key Laboratory for Ultrafine Materials of Ministry of Education, Shanghai Engineering Research Center of Hierarchical Nanomaterials, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237, China.
² Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China.
³ Key Laboratory of Materials for High Power Laser, Chinese Academy of Sciences, Shanghai 201800, China.
⁴ Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
⁵ Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China.

PMID: 37883685
DOI: 10.1021/acsami.3c11409

Abstract

Halide lead perovskites have shown great development in recent years for ionizing radiation detection. However, the bias-induced interfacial electrochemical reaction between the perovskite and electrode severely deteriorates detector performance. We report that BCP strongly interacts with Al and constructs a stable Al-BCP chelating interface, resulting in the suppression of a detrimental electrochemical reaction. The fabricated Au/Al/BCP/C₆₀/CsPbBr₃/Au detector shows a low dark current of 3 nA with a stable baseline at an extremely high bias of 100 V (∼100 V mm^-1). The superior high-bias stability enables a high sensitivity of 7.3 × 10⁴ μC Gy_air^-1 cm^-2 at 100 V. Meanwhile, a low detection limit of 15 nGy_air s^-1 at 40 V is achieved due to the reduced noise. The outstanding performance of our device exceeds that of most advanced detectors based on CsPbBr₃ single crystals. Besides, X-ray imaging with 1 mm spatial resolution is well demonstrated at a low dose rate of 200 nGy_air s^-1. The interfacial chelating strategy overcomes the technical limitation of bias-induced instability of perovskite radiation detectors and can be anticipated to operate under an extremely high electrical field.

Keywords: CsPbBr3; X-ray detectors; electrochemical reaction; interface engineering; ion migration.