ZnGa2- xAlxO4 (x = 0 ≤ 2) spinel for persistent light emission and HER/OER bi-functional catalysis

RSC Adv. 2023 Oct 24;13(44):31101-31111. doi: 10.1039/d3ra05017c. eCollection 2023 Oct 18.

Abstract

Spinel materials have demonstrated diverse applications in various fields, especially in the energy sector. Since the pure spinel structure has the limitations of poor inherent activity and low conductivity, defect engineering through octahedral B-site modulation is expected to enhance various properties. Here in this work, we have synthesized ZnGa2-xAlxO4 (x = 0 ≤ 2) spinel and moved from one terminal (ZnGa2O4) to the other (ZnAl2O4) by varying the Ga/Al ratio using solvent-free solid-state reaction. Dopant and rare earth element-free (RE) ZnGa2O4 spinel showed excellent blue luminescence with photoluminescent quantum yields (PLQY) of 13% while exhibiting persistent light emission close to 60 min. The Al3+ incorporation at Ga3+ site doesn't yield any improvement in persistent luminescence lifetime owing to quenching of shallow traps as suggested by thermoluminescence (TL) studies. Moreover our materials have demonstrated bifunctional electrocatalytic activity towards both oxygen evolution (OER) and hydrogen evolution reaction (HER) which has never been reported for ZnGa2-xAlxO4. X-ray photoelectron spectroscopy (XPS) and positron annihilation lifetime spectroscopy (PALS) suggested that mixed Al/Ga-containing spinels possessed enhanced oxygen vacancies/defects. This makes them better electrocatalyst towards OER and HER compare to ZnGa2O4 and ZnAl2O4. The ZnGa1.75Al0.25O4 composition by virtue of enhanced oxygen vacancies and less charge transfer resistance (47.3 ohms) demonstrated best electrocatalytic activity for OER compared to the other synthesized catalysts at the same applied potential (1.6 V). On the other hand, the ZnGa1Al1O4 composition demonstrated excellent faradaic efficiency of ∼ 90% towards HER. From this work we can achieve multifunctional applications towards optoelectronics and electrocatalysis just by modulating Al/Ga ratio in ZnGa2-xAlxO4.