Retraction: Progressive p-channel vertical transistors fabricated using electrodeposited copper oxide designed with grain boundary tunability

Sung Hyeon Jung; Ji Sook Yang; Young Been Kim; Nishad G Deshpande; Dong Su Kim; Ji Hoon Choi; Hee Won Suh; Hak Hyeon Lee; Hyung Koun Cho

doi:10.1039/d3mh90059b

Retraction: Progressive p-channel vertical transistors fabricated using electrodeposited copper oxide designed with grain boundary tunability

Mater Horiz. 2023 Oct 30;10(11):5313. doi: 10.1039/d3mh90059b.

Authors

Sung Hyeon Jung¹, Ji Sook Yang¹, Young Been Kim¹, Nishad G Deshpande², Dong Su Kim¹, Ji Hoon Choi¹, Hee Won Suh¹, Hak Hyeon Lee¹, Hyung Koun Cho^{1

3}

Affiliations

¹ School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do, 16419, Republic of Korea. chohk@skku.edu.
² Indian Institute of Information Technology Surat, 395007, India.
³ Research Center for Advanced Materials Technology, Sungkyunkwan University (SKKU), 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do, 16419, Republic of Korea.

PMID: 37850369
DOI: 10.1039/d3mh90059b

Abstract

Retraction of 'Progressive p-channel vertical transistors fabricated using electrodeposited copper oxide designed with grain boundary tunability' by Sung Hyeon Jung et al., Mater. Horiz., 2022, 9, 1010-1022, https://doi.org/10.1039/D1MH01568K.

Publication types

Retraction of Publication