(Bi,Sb)2 Se3 Alloy Thin Film for Short-Wavelength Infrared Photodetector and TFT Monolithic-Integrated Matrix Imaging

Ruisi Gao; Xin He; Chao Chen; Xiaoqing Bao; Feifan Yang; Xuke Yang; Jungang He; Chong Dong; Chuanhao Li; Shuo Chen; Guangxing Liang; Shenglin Jiang; Jiang Tang; Guangzu Zhang; Kanghua Li

doi:10.1002/smll.202308070

(Bi,Sb)₂ Se₃ Alloy Thin Film for Short-Wavelength Infrared Photodetector and TFT Monolithic-Integrated Matrix Imaging

Small. 2024 Mar;20(9):e2308070. doi: 10.1002/smll.202308070. Epub 2023 Oct 17.

Authors

Ruisi Gao¹, Xin He², Chao Chen¹, Xiaoqing Bao¹, Feifan Yang¹, Xuke Yang¹, Jungang He³, Chong Dong¹, Chuanhao Li⁴, Shuo Chen⁴, Guangxing Liang⁴, Shenglin Jiang¹, Jiang Tang¹, Guangzu Zhang¹, Kanghua Li¹

Affiliations

¹ School of Integrated Circuits, Engineering Research Center for Functional Ceramics MOE, Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China.
² Key Laboratory of Optoelectronic Chemical Materials and Devices of Ministry of Education, Jianghan University, Wuhan, 430056, P. R. China.
³ Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, Hubei Engineering Technology Research Center of Optoelectronic and New Energy Materials, School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan, 430205, P. R. China.
⁴ Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, P. R. China.

PMID: 37849040
DOI: 10.1002/smll.202308070

Abstract

Short-wavelength infrared photodetectors play a significant role in various fields such as autonomous driving, military security, and biological medicine. However, state-of-the-art short-wavelength infrared photodetectors, such as InGaAs, require high-temperature fabrication and heterogenous integration with complementary metal-oxide-semiconductor (CMOS) readout circuits (ROIC), resulting in a high cost and low imaging resolution. Herein, for the first time, a low-cost, high-performance, high-stable, and thin-film transistor (TFT) ROIC monolithic-integrated (Bi,Sb)₂ Se₃ alloy thin-film short-wavelength infrared photodetector is reported. The (Bi,Sb)₂ Se₃ alloy thin-film short-wavelength infrared photodetectors demonstrate a high external quantum efficiency (EQE) of 21.1% (light intensity of 0.76 µW cm^-2 ) and a fast response time (3.24 µs). The highest EQE is about two magnitudes than that of the extrinsic photoconduction of Sb₂ Se₃ (0.051%). In addition, the unpackaged devices demonstrate high electric and thermal stability (almost no attenuation at 120 °C for 312 h), showing potential for in-vehicle applications that may experient such a high temperature. Finally, both the (Bi,Sb)₂ Se₃ alloy thin film and n-type CdSe buffer layer are directly deposited on the TFT ROIC (with a 64 × 64-pixel array) with a low-temperature process and the material identification and imaging applications are presented. This work is a significant breakthrough in ROIC monolithic-integrated short-wavelength infrared imaging chips.

Keywords: (Bi,Sb)2Se3; photodetectors; short-wavelength infrared; thin films; thin-film transistor (TFT) matrix imaging.

Abstract

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