High level ab initio calculations on the electronic states of a silicon dimer (Si2) have been carried out by employing a multi-reference configuration interaction plus Davidson correction (MRCI + Q) approach with the aug-cc-pVQZ basis set. The scalar relativistic correction is taken into consideration by the second-order Douglas-Kroll-Hess approximation. In the present work, the transition properties (oscillator strength, Einstein spontaneous emission coefficient and radiative lifetime) of the singlet-singlet, triplet-triplet, and quintet-quintet transitions of Si2 are discussed. We emphasize the triplet-triplet emission bands H3Σ-u-X3Σ-g, K3Σ-u-X3Σ-g and D3Πu-L3Πg which are dominant for 0-11 (18 822 cm-1), 0-0 (30 672 cm-1), and 0-0 (28 881 cm-1) transitions, respectively. In addition, the strong experimentally observed b1Πu-d1Σ+g band around 4184 cm-1 corresponds to the second 1Σ+g-b1Πu combination in the infrared region. The calculated oscillator strengths of the singlet-singlet transitions (f1Πg-e1Σ-u, 21Πg-b1Πu, b1Πu-d1Σ+g and g1Δu-a1Δg) are in the order of 10-3. From a theoretical point of view, the 0-0 sub-band for the f1Πg-e1Σ-u transition, 0-7 for 21Πg-b1Πu, 0-0 for b1Πu-d1Σ+g and the 0-7 vibronic bands for the g1Δu-a1Δg transition may be observed experimentally. It is expected that the present results could provide theoretical support for a deeper understanding of the experimental Si2 spectra providing further applications in astrophysics.