Interface Structure, Dielectric Behavior and Temperature Stability of Ba(Mg1/3Ta2/3)O3/PbZr0.52Ti0.48O3 Thin Films

Zhi Wu; Yifei Liu; Jing Zhou; Hong Zhao; Zhihui Qin

doi:10.3390/ma16196358

Interface Structure, Dielectric Behavior and Temperature Stability of Ba(Mg_1/3Ta_2/3)O₃/PbZr_0.52Ti_0.48O₃ Thin Films

Materials (Basel). 2023 Sep 22;16(19):6358. doi: 10.3390/ma16196358.

Authors

Zhi Wu¹, Yifei Liu^{1

2}, Jing Zhou², Hong Zhao¹, Zhihui Qin¹

Affiliations

¹ School of Materials and Engineering, Hunan Institute of Technology, Hengyang 421002, China.
² State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, China.

Abstract

Multilayer films can achieve advanced properties and a wide range of applications. The heterogeneous interface plays an important role in the performances of multilayer films. In this paper, the effects of the interface of Ba(Mg_1/3Ta_2/3)O₃/PbZr_0.52Ti_0.48O₃ (BMT/PZT) thin films on dielectric behavior and temperature stability are investigated. The heterogeneous interface structures are characterized by Auger electron spectroscopy (AES). The PZT-BMT interface is different from the BMT-PZT interface in thickness. For the PZT-BMT interface, the PZT thin films are diffused to the whole BMT layers, and the interface thickness is about 90 nm, while the BMT-PZT interface's thickness is only about 8.6 nm. The presence of heterogeneous interfaces can improve the performances of BMT/PZT thin films and expand their applications. The dielectric constant of BBPP thin films is significantly lower than BPBP thin films, while the dielectric loss is exactly the opposite. The more interfaces there are, the greater the dielectric constant. The relationship between the electric-field-dependent dielectric constant curve and the P-E curve is established. The equivalent interface barrier of the diode is used to show that the dielectric peaks under the positive and negative voltage are different. Similarly, heterogeneous interfaces show a certain improvement in dielectric tunability and temperature stability.

Keywords: BMT/PZT thin films; dielectric behavior; interface number; temperature stability.

Grants and funding

This research was funded by the Natural Science Foundation of Hunan Province (No. 2021JJ40165), the National Natural Science Foundation of China (No. 51802093), the Scientific Research Fund of Hunan Provincial Education Department (No. 20B161), the Characteristic Application Discipline of Material Science and Engineering in Hunan Province (No. [2022]351).