Mechanically Robust Interface at Metal/Muscovite Quasi van der Waals Epitaxy

Jia-Wei Chen; Yun-Guan Wei; Hung-Yang Lo; SiCheng Lu; Yi-Che Chen; Chi-Fong Lei; Po-Liang Liu; Pu Yu; Nien-Ti Tsou; Akira Yasuhara; Wen-Wei Wu; Ying-Hao Chu

doi:10.1021/acsami.3c09129

Mechanically Robust Interface at Metal/Muscovite Quasi van der Waals Epitaxy

ACS Appl Mater Interfaces. 2023 Oct 11;15(40):47715-47724. doi: 10.1021/acsami.3c09129. Epub 2023 Sep 28.

Authors

Jia-Wei Chen¹, Yun-Guan Wei¹, Hung-Yang Lo¹, SiCheng Lu², Yi-Che Chen³, Chi-Fong Lei¹, Po-Liang Liu^{3

4}, Pu Yu², Nien-Ti Tsou¹, Akira Yasuhara⁵, Wen-Wei Wu¹, Ying-Hao Chu^{1

6

7}

Affiliations

¹ Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.
² State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China.
³ Graduate Institute of Precision Engineering, National Chung Hsing University, Taichung 402, Taiwan.
⁴ Innovation and Development Center of Sustainable Agriculture, National Chung Hsing University, Taichung 402, Taiwan.
⁵ EM Application Department of EM Business Unit, JEOL Ltd., 3-1-2 Musashino, Akishima, Tokyo 196-8558, Japan.
⁶ Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan.
⁷ Institute of Physics, Academia Sinica, Taipei 115, Taiwan.

PMID: 37769228
DOI: 10.1021/acsami.3c09129

Abstract

Quasi van der Waals epitaxy is an approach to constructing the combination of 2D and 3D materials. Here, we quantify and discuss the 2D/3D interface structure and the corresponding features in metal/muscovite systems. High-resolution scanning transmission electron microscopy reveals the atomic arrangement at the interface. The theoretical results explain the formation mechanism and predict the mechanical robustness of these metal/muscovite quasi van der Waals epitaxies. The evidence of superior interface quality is delivered according to the outstanding performance of the designed systems in both retention (>10⁵ s) and cycling tests (>10⁵ cycles) through electromechanical measurements. With high-temperature X-ray reciprocal space mapping, the unique anisotropy of thermal expansion is discovered and predicted to sustain the thermal stress with a sizable thermal actuation. A maximum bending curvature of 264 m^-1 at 243 °C can be obtained in the silver/muscovite heteroepitaxy. The electrothermal and photothermal methods show a fast response to thermal stress and demonstrate the interface robustness.

Keywords: STEM; flexible; muscovite; thermal actuation; van der Waals epitaxy.