This research introduces low-temperature soldering of Ga with practical metallization structures, namely, Cu/Ni/Pd and Cu/Ni/Au, applied to contemporary microelectronic packages. Through these multilayer configurations, the study investigates the stability of the Ni diffusion barrier by examining changes in the interfacial microstructure as Ni is consumed. The interfacial reactions are conducted across a temperature spectrum of 160, 200, 240, and 280 °C, with reaction durations ranging from 30 to 270 min. Valuable insights for low-temperature soldering with Ga are extracted from the data. At lower reaction temperatures, the presence of Ga-rich intermetallic compounds (IMCs), specifically GaxNi (x = 89 to 95 at%), on the Ga7Ni3 layer is notably confirmed. As the reaction temperature and duration increase, the gradual consumption of the Ni layer occurs. This gives rise to the formation of Ga-Cu IMCs, specifically CuGa2 and γ3-Cu9Ga4, beneath the Ga-Ni IMC layer. Concurrently, the gap between the Ga-Ni and Ga-Cu IMC layers widens, allowing molten Ga to infiltrate. The rate of Ga7Ni3 growth follows a time exponent ranging approximately from 1.1 to 1.7. This highlights the significant influence of interface reaction-controlled kinetics on Ga7Ni3 IMC growth. The activation energy for Ga7Ni3 growth is determined to be 61.5 kJ/mol. The growth of Ga7Ni3 is believed to be primarily driven by the diffusion of Ga atoms along grain boundaries, with the porous microstructure inherent in the Ga7Ni3 layer providing additional diffusion pathways.
Keywords: X-ray diffraction; gallium; interfacial reaction; intermetallic compound; scanning electron microscopy.