Encoding multistate charge order and chirality in endotaxial heterostructures

Samra Husremović; Berit H Goodge; Matthew P Erodici; Katherine Inzani; Alberto Mier; Stephanie M Ribet; Karen C Bustillo; Takashi Taniguchi; Kenji Watanabe; Colin Ophus; Sinéad M Griffin; D Kwabena Bediako

doi:10.1038/s41467-023-41780-y

Encoding multistate charge order and chirality in endotaxial heterostructures

Nat Commun. 2023 Sep 27;14(1):6031. doi: 10.1038/s41467-023-41780-y.

Authors

Samra Husremović¹, Berit H Goodge^{1

2}, Matthew P Erodici¹, Katherine Inzani³, Alberto Mier¹, Stephanie M Ribet^{4

5

6}, Karen C Bustillo⁴, Takashi Taniguchi⁷, Kenji Watanabe⁸, Colin Ophus⁴, Sinéad M Griffin^{9

10}, D Kwabena Bediako^{11

12}

Affiliations

¹ Department of Chemistry, University of California, Berkeley, CA, 94720, USA.
² Max-Planck-Institute for Chemical Physics of Solids, Nöthnitzer Str. 40, 01187, Dresden, Germany.
³ School of Chemistry, University of Nottingham, University Park, Nottingham, NG7 2RD, UK.
⁴ National Center for Electron Microscopy, Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
⁵ Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA.
⁶ International Institute of Nanotechnology, Northwestern University, Evanston, IL, 60208, USA.
⁷ Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, 305-0044, Japan.
⁸ International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, 305-0044, Japan.
⁹ Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
¹⁰ The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
¹¹ Department of Chemistry, University of California, Berkeley, CA, 94720, USA. bediako@berkeley.edu.
¹² Chemical Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA. bediako@berkeley.edu.

Abstract

High-density phase change memory (PCM) storage is proposed for materials with multiple intermediate resistance states, which have been observed in 1T-TaS₂ due to charge density wave (CDW) phase transitions. However, the metastability responsible for this behavior makes the presence of multistate switching unpredictable in TaS₂ devices. Here, we demonstrate the fabrication of nanothick verti-lateral H-TaS₂/1T-TaS₂ heterostructures in which the number of endotaxial metallic H-TaS₂ monolayers dictates the number of resistance transitions in 1T-TaS₂ lamellae near room temperature. Further, we also observe optically active heterochirality in the CDW superlattice structure, which is modulated in concert with the resistivity steps, and we show how strain engineering can be used to nucleate these polytype conversions. This work positions the principle of endotaxial heterostructures as a promising conceptual framework for reliable, non-volatile, and multi-level switching of structure, chirality, and resistance.

Abstract

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