Electric field is a powerful instrument in nanoscale engineering, providing wide functionalities for control in various optical and solid-state nanodevices. The development of a single optically resonant nanostructure operating with a charge-induced electrical field is challenging, but it could be extremely useful for novel nanophotonic horizons. Here, we show a resonant metal-semiconductor nanostructure with a static electric field created at the interface between its components by charge carriers generated via femtosecond laser irradiation. We study this field experimentally, probing it by second-harmonic generation signal, which, in our system, is time-dependent and has a non-quadratic signal/excitation power dependence. The developed numerical models reveal the influence of the optically induced static electric field on the second harmonic generation signal. We also show how metal work function and silicon surface defect density for different charge carrier concentrations affect the formation of this field. We estimate the value of optically-generated static electric field in this nanoantenna to achieve ≈108V/m. These findings pave the way for the creation of nanoantenna-based optical memory, programmable logic and neuromorphic devices.
© 2023. Changchun Institute of Optics, Fine Mechanics and Physics (CIOMP), CAS.