In the current and next-generation Si-based semiconductor manufacturing processes, amorphous carbon layer (ACL) hard masks are garnering considerable attention for high-aspect-ratio (HAR) etching due to their outstanding physical properties. However, a current limitation is the lack of research on the etching characteristics of ACL hard masks under plasma etching conditions. Given the significant impact of hard mask etching on device quality and performance, a deeper understanding of the etching characteristics of ACL is necessary. This study aims to investigate the role of oxygen in the etching characteristics of an ACL hard mask in a complex gas mixture plasma etching process. Our results show that a small change of oxygen concentration (3.5-6.5%) can significantly alter the etch rate and profile of the ACL hard mask. Through our comprehensive plasma diagnostics and wafer-processing results, we have also proven a detailed mechanism for the role of the oxygen gas. This research provides a solution for achieving an outstanding etch profile in ACL hard masks with sub-micron scale and emphasizes the importance of controlling the oxygen concentration to optimize the plasma conditions for the desired etching characteristics.
© 2023 The Authors. Published by American Chemical Society.