A bulk form Cu-based ferromagnetic semiconductor (La,Ba)(Cu,Mn)SO with the Curie temperature up to 170 K

Jinou Dong; Cui Ding; Xueqin Zhao; Lingfeng Xie; Qiaolin Yang; Xun Pan; Guoxiang Zhi; Licheng Fu; Yilun Gu; Fanlong Ning

doi:10.1038/s41598-023-41895-8

A bulk form Cu-based ferromagnetic semiconductor (La,Ba)(Cu,Mn)SO with the Curie temperature up to 170 K

Sci Rep. 2023 Sep 5;13(1):14637. doi: 10.1038/s41598-023-41895-8.

Authors

Jinou Dong¹, Cui Ding¹, Xueqin Zhao¹, Lingfeng Xie¹, Qiaolin Yang¹, Xun Pan¹, Guoxiang Zhi¹, Licheng Fu¹, Yilun Gu¹, Fanlong Ning^{2

3

4

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Affiliations

¹ Zhejiang Province Key Laboratory of Quantum Technology and Device and School of Physics, Zhejiang University, Hangzhou, 310027, China.
² Zhejiang Province Key Laboratory of Quantum Technology and Device and School of Physics, Zhejiang University, Hangzhou, 310027, China. ningfl@zju.edu.cn.
³ Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China. ningfl@zju.edu.cn.
⁴ State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, 310027, China. ningfl@zju.edu.cn.
⁵ Science and Technology Innovation Center, Chifeng High-Tech Industrial Development Zone, Chifeng, 025250, China. ningfl@zju.edu.cn.

Abstract

We report the ferromagnetism in a new bulk form Cu-based magnetic semiconductor (La,Ba)(Cu,Mn)SO, which is iso-structural to the prototypical iron-based 1111-type superconductor LaFeAsO. Starting from the parent compound LaCuSO, carriers are introduced via the substitutions of La for Ba while spins are introduced via the substitutions of Cu for Mn. Spins are mediated by carriers, which develops into the long range ferromagnetic ordering. The maximum Curie temperature [Formula: see text] reaches up to [Formula: see text] 170 K with the doping levels of 10% Ba and 5% Mn. By comparing to the (La,Sr)(Cu,Mn)SO where Sr and Mn are co-doped into LaCuSO, we demonstrate that negative chemical pressure would suppress the ferromagnetic ordering.

Abstract

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