Reversible switching of room-temperature electrical resistivity due to crystal-amorphous transition is demonstrated in various chalcogenides for development of non-volatile phase change memory. However, such reversible thermal switching of room-temperature electrical resistivity has not reported in transition metal oxides so far, despite their enormous studies on the electrical conduction like metal-insulator transition and colossal magnetoresistance effect. In this study, a thermally reversible switching of room-temperature electrical resistivity is reported with gigantic variation in a layered nickelate Sr2.5 Bi0.5 NiO5 (1201-SBNO) composed of (Sr1.5 Bi0.5 )O2 rock-salt and SrNiO3 perovskite layers via unique crystalline phase changes between the conducting 1201-SBNO with ordered (O-1201), disordered Sr/Bi arrangements in the (Sr1.5 Bi0.5 )O2 layer (D-1201), and insulating oxygen-deficient double perovskite Sr2 BiNiO4.5 (d-perovskite). The O-1201 is reentrant by high-temperature annealing of ≈1000 °C through crystalline phase change into the D-1201 and d-perovskite, resulting in the thermally reversible switching of room-temperature electrical resistivity with 102 - and 109 -fold variation, respectively. The 1201-SBNO is the first oxide to show the thermally reversible switching of room-temperature electrical resistivity via the crystalline phase changes, providing a new perspective on the electrical conduction for transition metal oxides.
Keywords: crystalline phase change; electrical conduction; local atomic arrangement; reversible switching of electrical resistivity; transition metal oxide.
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