Piezoelectric materials are defined by their ability to display a charge across their surface in response to mechanical strain, making them great for use in sensing applications. Such applications include pressure sensors, medical devices, energy harvesting and structural health monitoring (SHM). SHM describes the process of using a systematic approach to identify damage in engineering infrastructure. A method of SHM that uses piezoelectric wafers connected directly to the structure has become increasingly popular. An investigation of a novel pitch-catch method of determining instrumentation quality of piezoelectric wafer active sensors (PWASs) used in SHM was conducted as well as an investigation into the effects of defects in piezoelectric sensors and sensor bonding on the sensor response. This pitch-catch method was able to verify defect-less instrumentation quality of pristinely bonded PWASs. Additionally, the pitch-catch method was compared with the electromechanical impedance method in determining defects in piezoelectric sensor instrumentation. Using the pitch-catch method, it was found that defective instrumentation resulted in decreasing amplitude of received and transmitted signals as well as changes in the frequency spectrums of the signals, such as the elimination of high frequency peaks in those with defects in the bonding layer and an increased amplitude of around 600 kHz for a broken PWAS. The electromechanical impedance method concluded that bonding layer defects increase the primary frequency peak's amplitude and cause a downward frequency shift in both the primary and secondary frequency peaks in the impedance spectrum, while a broken sensor has the primary peak amplitude reduced while shifting upward and nearly eliminating the secondary peak.
Keywords: piezoelectric wafer active sensors; structural health monitoring.