Correction: Synaptic plasticity and non-volatile memory characteristics in TiN-nanocrystal-embedded 3D vertical memristor-based synapses for neuromorphic systems

Seyeong Yang; Taegyun Kim; Sunghun Kim; Daewon Chung; Tae-Hyeon Kim; Jung Kyu Lee; Sungjoon Kim; Muhammad Ismail; Chandreswar Mahata; Sungjun Kim; Seongjae Cho

doi:10.1039/d3nr90165c

Correction: Synaptic plasticity and non-volatile memory characteristics in TiN-nanocrystal-embedded 3D vertical memristor-based synapses for neuromorphic systems

Nanoscale. 2023 Sep 1;15(34):14267. doi: 10.1039/d3nr90165c.

Authors

Affiliations

¹ Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, South Korea. sungjun@dongguk.edu.
² School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA.
³ Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, South Korea.
⁴ Department of Electronic and Electrical Engineering, Ewha Womans University, Seoul 03760, South Korea. felixcho@ewha.ac.kr.

PMID: 37609880
DOI: 10.1039/d3nr90165c

Abstract

Correction for 'Synaptic plasticity and non-volatile memory characteristics in TiN-nanocrystal-embedded 3D vertical memristor-based synapses for neuromorphic systems' by Seyeong Yang et al., Nanoscale, 2023, https://doi.org/10.1039/D3NR01930F.

Publication types

Published Erratum