Ambient-Stable 2D Dion-Jacobson Phase Tin Halide Perovskite Field-Effect Transistors with Mobility over 1.6 Cm2 V-1 s-1

Xincan Qiu; Jiangnan Xia; Yu Liu; Ping-An Chen; Lanyu Huang; Huan Wei; Jiaqi Ding; Zhenqi Gong; Xi Zeng; Chengyuan Peng; Chen Chen; Xiao Wang; Lang Jiang; Lei Liao; Yuanyuan Hu

doi:10.1002/adma.202305648

Ambient-Stable 2D Dion-Jacobson Phase Tin Halide Perovskite Field-Effect Transistors with Mobility over 1.6 Cm² V^-1 s^-1

Adv Mater. 2023 Nov;35(44):e2305648. doi: 10.1002/adma.202305648. Epub 2023 Sep 24.

Authors

Xincan Qiu^{1

2

3

4}, Jiangnan Xia^{1

3

4}, Yu Liu^{1

3

4}, Ping-An Chen^{1

3

4}, Lanyu Huang⁵, Huan Wei^{1

3

4}, Jiaqi Ding^{1

3

4}, Zhenqi Gong^{1

3

4}, Xi Zeng^{1

3

4}, Chengyuan Peng^{1

3

4}, Chen Chen⁶, Xiao Wang⁵, Lang Jiang⁷, Lei Liao¹, Yuanyuan Hu^{1

3

4}

Affiliations

¹ Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China.
² Key Laboratory of Hunan Province for 3D Scene Visualization and Intelligence Education (2023TP1038), School of Electronic Information, Hunan First Normal University, Changsha, 410205, China.
³ Shenzhen Research Institute of Hunan University, Shenzhen, 518063, China.
⁴ International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, 410082, China.
⁵ School of Physics and Electronics, Hunan University, Changsha, 410082, China.
⁶ Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, College of Aerospace Science and Engineering, National University of Defense Technology, Changsha, 410000, China.
⁷ Beijing National Laboratory for Molecular Sciences, Institute of Chemistry Chinese Academy of Sciences, Beijing, 100190, China.

PMID: 37603829
DOI: 10.1002/adma.202305648

Abstract

Solution-processed metal halide perovskites hold immense potential for the advancement of next-generation field-effect transistors (FETs). However, the instability of perovskite-based transistors has impeded their progress and practical applications. Here, ambient-stable high-performance FETs based on 2D Dion-Jacobson phase tin halide perovskite BDASnI₄ , which has high film quality and excellent electrical properties, are reported. The perovskite channels are established by engineering the film crystallization process via the employment of ammonium salt interlayers and the incorporation of NH₄ SCN additives within the precursor solution. The refined FETs demonstrate field-effect hole mobilities up to 1.61 cm² V^-1 s^-1 and an on/off ratio surpassing 10⁶ . Moreover, the devices show impressive operational and environmental stability and retain their functional performance even after being exposed to ambient conditions with a temperature of 45 °C and humidity of 45% for over 150 h.

Keywords: Dion-Jacobson phase perovskites; ambient-stable transistors; field-effect transistors; high performance electronics.

Abstract

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