Low energy Si+, SiCH5+, or C+ beam injections to silicon substrates during chemical vapor deposition with dimethylsilane

Satoru Yoshimura; Satoshi Sugimoto; Takae Takeuchi; Kensuke Murai; Masato Kiuchi

doi:10.1016/j.heliyon.2023.e19002

Low energy Si⁺, SiCH₅⁺, or C⁺ beam injections to silicon substrates during chemical vapor deposition with dimethylsilane

Heliyon. 2023 Aug 6;9(8):e19002. doi: 10.1016/j.heliyon.2023.e19002. eCollection 2023 Aug.

Authors

Satoru Yoshimura¹, Satoshi Sugimoto¹, Takae Takeuchi¹, Kensuke Murai², Masato Kiuchi^{1

3}

Affiliations

¹ Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka, 565-0871, Japan.
² National Institute of Advanced Industrial Science and Technology (AIST), 1-8-31 Midorigaoka, Ikeda, Osaka, 563-8577, Japan.
³ Cerast Laboratory, Tokyo, 154-0011, Japan.

Abstract

We found that the atomic-concentration-ratio of carbon to silicon (C/Si ratio) in silicon carbide (SiC) films formed by thermal chemical vapor deposition (CVD) was much greater than 1 when the source gas for CVD was dimethylsilane (DMS). Thus, we tried to change carbon-inclusion levels in the film by injecting some ion beams into a depositing SiC film during the CVD process with DMS. Three ion beams, i.e., Si⁺, SiCH₅⁺, or C⁺ ions were injected to depositing SiC films. The energy of Si⁺, SiCH₅⁺, and C⁺ ions was 110 eV. The temperature of the substrate was 800 °C. X-ray diffraction of the deposited films showed that 3C-SiC was included in all three samples. X-ray photoelectron spectroscopy (XPS) showed that the C/Si ratio of the obtained SiC film increased significantly following the Si⁺ or C⁺ ion beam irradiations. The XPS measurements also showed that the C/Si ratio of the SiC film obtained by injecting SiCH₅⁺ beam during thermal CVD with DMS was lower than that of the SiC film formed by thermal CVD with DMS alone.

Keywords: Chemical vapor deposition; Dimethylsilane; Low energy ion beam; Silicon carbide.