N-Heterocyclic imine-based bis-gallium(I) carbene analogs featuring a four-membered Ga2N2 ring

Bing Wang; Wenhao Chen; Jiangnan Yang; Linfang Lu; Jiyong Liu; Liang Shen; Di Wu

doi:10.1039/d3dt00782k

N-Heterocyclic imine-based bis-gallium(I) carbene analogs featuring a four-membered Ga₂N₂ ring

Dalton Trans. 2023 Sep 13;52(35):12454-12460. doi: 10.1039/d3dt00782k.

Authors

Bing Wang¹, Wenhao Chen¹, Jiangnan Yang¹, Linfang Lu¹, Jiyong Liu², Liang Shen¹, Di Wu^{1

3}

Affiliations

¹ College of Materials, Chemistry and Chemical Engineering, Key Laboratory of Organosilicon Chemistry and Material Technology, Ministry of Education, Hangzhou Normal University, Hangzhou 311121, China. wudi@hznu.edu.cn.
² Department of Chemistry, Zhejiang University, Hangzhou 310028, China.
³ Hubei Key Laboratory of Quality Control of Characteristic Fruits and Vegetables, Hubei Engineering University, Hubei 432000, China.

PMID: 37594454
DOI: 10.1039/d3dt00782k

Abstract

A combination of Ga(I) centers as important building blocks and scaffolds containing N-heterocyclic imines gives new insights into low-valent Ga chemistry. In this study, a mixture of L^DipNLi (L^Dip = 1,3-bis(2,6-diisopropylphenyl)-imidazolin-2-ylidene), ^tBuOK, and Cp*Ga (Cp* = pentamethylcyclopentadienyl) in toluene afforded [L^DipN-Ga]₂ (1) via salt metathesis. X-ray structure analysis of 1 revealed a four-membered Ga₂N₂ ring, and DFT studies indicated the presence of a lone pair at each Ga center. In addition, compound 1 demonstrated diverse reactivities towards methyl trifluoromethanesulfonate, diphenyl disulfide, 9,10-phenanthrenequinone, and ECl₂ (E = Ge or Sn).