One potential source of per- and polyfluoroalkyl substances (PFASs) in electronics fabrication wastewater are the organofluorine-containing compounds used in photolithography materials such as photoresists and top antireflective coatings (TARCs). However, the exact identities of these constituents are unknown and transformation reactions that may occur during photolithography may result in the formation of unknown or unexpected PFASs. To address this knowledge gap, we acquired five commercially relevant photolithography materials, characterized the occurrence of organofluorine-containing compounds in each material, and performed simulated photolithography experiments to stimulate any potential transformation reactions. We found that photoresists and TARCs have total fluorine (TF) concentrations in the g L-1 range, similar to the levels of other industrial and commercial products. However, the target and suspect PFASs present in these materials can only explain up to 20% of the TF in a material. We evaluated wastewater samples collected after simulated photolithography experiments and used a mass balance approach to assess the extent of transformations. Although a number of target, suspect, and nontarget PFASs were identified in the wastewater samples, the extent of transformation was limited and the fluorine contained in the PFASs could not explain more than an additional 1% of the TF in the photolithography materials.
Keywords: PFAS; electronics fabrication; industrial wastewater; photolithography; semiconductor.