Tunable electronic and optical properties of ferroelectric WS2/Ga2O3heterostructures

Dong Wei; Yi Li; Gaofu Guo; Heng Yu; Yaqiang Ma; Yanan Tang; Zhen Feng; Xianqi Dai

doi:10.1088/1361-648X/acef89

Tunable electronic and optical properties of ferroelectric WS₂/Ga₂O₃heterostructures

J Phys Condens Matter. 2023 Aug 31;35(47). doi: 10.1088/1361-648X/acef89.

Authors

Dong Wei¹, Yi Li², Gaofu Guo¹, Heng Yu¹, Yaqiang Ma¹, Yanan Tang², Zhen Feng³, Xianqi Dai¹

Affiliations

¹ School of Physics, Henan Normal University, Xinxiang, Henan 453007, People's Republic of China.
² School of Physics and Electronic Engineering, Zhengzhou Normal University, Zhengzhou, Henan 450044, People's Republic of China.
³ School of Materials Science and Engineering, Henan Institute of Technology, Xinxiang, Henan 453000, People's Republic of China.

PMID: 37567212
DOI: 10.1088/1361-648X/acef89

Abstract

To integrate two-dimensional (2D) materials into van der Waals heterostructures (vdWHs) is regarded as an effective strategy to achieve multifunctional devices. The vdWHs with strong intrinsic ferroelectricity is promising for applications in the design of new electronic devices. The polarization reversal transitions of 2D ferroelectric Ga₂O₃layers provide a new approach to explore the electronic structure and optical properties of modulated WS₂/Ga₂O₃vdWHs. The WS₂/Ga₂O₃↑ and WS₂/Ga₂O₃↓ vdWHs are designed to explore possible characteristics through the electric field and biaxial strain. The biaxial strain can effectively modulate the mutual transition of two mode vdWHs in type II and type I band alignment. The strain engineering enhances the optical absorption properties of vdWHs, encompassing excellent optical absorption properties in the range from infrared to visible to ultraviolet, ensuring promising applications in flexible electronics and optical devices. Based on the highly modifiable physical properties of the WS₂/Ga₂O₃vdWHs, we have further explored the potential applications for the field-controlled switching of the channel in MOSFET devices.

Keywords: electronic structure; ferroelectric; optical properties; polarization reversal.