Preparation and Laser-Induced Thermoelectric Voltage Effect of Bi2Sr2Co2Oy Thin Films Grown on Al2O3 (0001) Substrate

Ping Zou; Dan Lv; Hui Zhang; Zhidong Li

doi:10.3390/ma16145165

Preparation and Laser-Induced Thermoelectric Voltage Effect of Bi₂Sr₂Co₂O_y Thin Films Grown on Al₂O₃ (0001) Substrate

Materials (Basel). 2023 Jul 22;16(14):5165. doi: 10.3390/ma16145165.

Authors

Ping Zou¹, Dan Lv¹, Hui Zhang², Zhidong Li²

Affiliations

¹ School of Materials Science and Engineering, Guizhou Minzu University, Guiyang 550025, China.
² School of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, China.

Abstract

Bi₂Sr₂Co₂O_y thin films were grown on 10° vicinal-cut Al₂O₃ (0001) single crystalline substrates by pulsed laser-deposition techniques with in situ annealing, post-annealing and non-annealing process, respectively. The pure phase Bi₂Sr₂Co₂O_y thin film was obtained with a non-annealing process. The result of X-ray diffraction showed that Bi₂Sr₂Co₂O_y thin film was obviously c-axis preferred orientation. The laser-induced thermoelectric voltage signals were detected in Bi₂Sr₂Co₂O_y thin films, which originated from the anisotropy of the Seebeck coefficient. The maximum peak value of laser-induced thermoelectric voltage was strong and could reach as large as 0.44 V and the response time was 1.07 μs when the deposition time was 6 min. Furthermore, the peak voltage enhanced linearly with the single-pulse laser energy. These characteristics demonstrate that Bi₂Sr₂Co₂O_y thin film is also an excellent choice for laser energy/power detectors.

Keywords: Bi2Sr2Co2Oy thin films; deposition process; laser-induced thermoelectric voltage; pulsed laser deposition.

Abstract

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