Oxidative thiosulfate leaching using Cu(II)-NH3 has been explored for both mining and recycling applications as a promising method for Au extraction. This study seeks to understand the dissolution behavior of Au from waste RAM chips using a Cu(II)-NH3-S2O3 solution. In the course of this work, bimodal leaching and Au loss were observed in a manner that we have not identified in the literature. Identification of the existence of a specific Au-Ni-Cu lamellar structure in the gold fingers from RAM chips by scanning electron microscopy and energy dispersive X-ray spectroscopy (SEM-EDS) revealed the possibility of interference between Au recovery and the existence of Cu and Ni. During leaching, the co-extraction of Ni was found to predict a negative impact on the Au recovery, as a result of chemical interactions from the Au-Ni-Cu interlayer. Decopperization as a pretreatment was found necessary to remove the pre-existing Cu and promote Au leaching. As part of the study parameters, such as Cu(II) concentration, aeration rates, thiosulfate and ammonia concentrations, particle sizes, and temperatures, were investigated. A satisfactory Au recovery of 98% was achieved using 50 mM Cu(II), 120 mL/min aeration rate, 0.5 M (NH3)2S2O3, and 0.75 M NH4OH (i.e., AT/AH ratio of 0.67) for 4 h residence time at room temperature (25 °C). However, there were several high recoveries prior to Au loss from the lixiviant. It was revealed that the main cause of lower Au recovery was due to a precipitation or cementation reaction that included a sulfur species formation. Because of the bimodal leaching, a composite response comprised of the time to Au loss and maximum recovery was developed, termed leaching proclivity, to facilitate statistical analysis. Furthermore, this study explores the interactions between Au-Ni-Cu and provides suggestions for improving Au thiosulfate leaching under the interference of co-existing metals from waste PCB materials.
Keywords: Au recovery; Ni recovery; cementation; copper sulfides; decopperization; extractive metallurgy; thiosulfate leaching; waste RAM chips.