Magnetic skyrmions have garnered considerable attention due to their topological properties and potential applications in information storage. These unique structures can be found in chiral magnets, including well-known compounds like MnSi and FeGe with a B20-type crystal structure. In this study, we utilized Lorentz transmission electron microscopy to investigate the influence of magnetic skyrmions on the Hall effect in FeGe under low magnetic fields. Additionally, we examined the magnetoresistance (MR) and Hall effect of FeGe under a high magnetic field of 28 T. Our findings reveal distinct mechanisms governing the MR at low and high temperatures. Notably, the anomalous Hall effect plays a significant role in the Hall resistivity observed at low magnetic fields. Meanwhile, the contribution of the skyrmion-induced topological Hall signal in the FeGe is ignorable. Furthermore, by employing a two-carrier model and fitting the carrier concentration of FeGe under high magnetic fields, we demonstrate a transition in the dominant carrier type from electrons to holes as the temperature increases. These results contribute to a deeper understanding of the intrinsic magnetic properties of FeGe.
Keywords: FeGe; Hall effect; magnetoresistance; skyrmions.
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