Interfacial modification is a promising strategy to fabricate highly efficient perovskite solar cells (PSCs). Nevertheless, research studies about optimization for the performance of Dion-Jacobson (DJ)-phase quasi-2D PSCs by underlying surface modification are rarely reported. The relevant influence of interfacial modification on defect regulation in the bulk and at the interface for PSCs is still unexplored. Herein, an interlayer of polyaspartic acid (PASP) was introduced at the interface of a hole transporting layer and a perovskite absorber to regulate both the film quality and interface property for BDA-based DJ quasi-2D PSCs (n = 5). The PASP interlayer suppressed the charge recombination, restricted the interfacial charge accumulation, and promoted the charge transport in devices and therefore improved the power conversion efficiency of PSCs from 15.03 to 17.34%. Moreover, through device simulation, it was concluded that the increase of open-circuit voltage (Voc) was mainly attributed to the suppression of interface defects, while the increase of short-circuit current (Jsc) was ascribed to the restriction of interface defects and perovskite bulk defects. The improvement of both Voc and Jsc originated from the passivation of shallow defect states. The present work provides a promising route for the fabrication of efficient quasi-2D PSCs and enriches the fundamental understanding of defect regulation on photovoltaic performance.
Keywords: Dion−Jacobson phase quasi-2D perovskite; defect regulation; device simulation; interfacial modification; polyaspartic acid.