Investigations on the high performance of InGaN red micro-LEDs with single quantum well for visible light communication applications

Fu-He Hsiao; Tzu-Yi Lee; Wen-Chien Miao; Yi-Hua Pai; Daisuke Iida; Chun-Liang Lin; Fang-Chung Chen; Chi-Wai Chow; Chien-Chung Lin; Ray-Hua Horng; Jr-Hau He; Kazuhiro Ohkawa; Yu-Heng Hong; Chiao-Yun Chang; Hao-Chung Kuo

doi:10.1186/s11671-023-03871-z

Investigations on the high performance of InGaN red micro-LEDs with single quantum well for visible light communication applications

Discov Nano. 2023 Jul 27;18(1):95. doi: 10.1186/s11671-023-03871-z.

Authors

Fu-He Hsiao^#^{1

2}, Tzu-Yi Lee^#³, Wen-Chien Miao^{1

2}, Yi-Hua Pai³, Daisuke Iida⁴, Chun-Liang Lin², Fang-Chung Chen³, Chi-Wai Chow³, Chien-Chung Lin⁵, Ray-Hua Horng⁶, Jr-Hau He⁷, Kazuhiro Ohkawa⁴, Yu-Heng Hong⁸, Chiao-Yun Chang⁹, Hao-Chung Kuo^{10

11}

Affiliations

¹ Semiconductor Research Center, Hon Hai Research Institute, Taipei, 11492, Taiwan.
² Department of Electrophysics, College of Science, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan.
³ Department of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan.
⁴ Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955 6900, Saudi Arabia.
⁵ Department of Electrical Engineering, National Taiwan University, Taipei, 10639, Taiwan.
⁶ Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan.
⁷ Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong Special Administrative Region, China.
⁸ Semiconductor Research Center, Hon Hai Research Institute, Taipei, 11492, Taiwan. enoch.yh.hong@foxconn.com.
⁹ Department of Electrical Engineering, National Taiwan Ocean University, Keelung, 202301, Taiwan. cy_chang@mail.ntou.edu.tw.
¹⁰ Semiconductor Research Center, Hon Hai Research Institute, Taipei, 11492, Taiwan. hckuo0206@nycu.edu.tw.
¹¹ Department of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan. hckuo0206@nycu.edu.tw.

^# Contributed equally.

Abstract

In this study, we have demonstrated the potential of InGaN-based red micro-LEDs with single quantum well (SQW) structure for visible light communication applications. Our findings indicate the SQW sample has a better crystal quality, with high-purity emission, a narrower full width at half maximum, and higher internal quantum efficiency, compared to InGaN red micro-LED with a double quantum wells (DQWs) structure. The InGaN red micro-LED with SQW structure exhibits a higher maximum external quantum efficiency of 5.95% and experiences less blueshift as the current density increases when compared to the DQWs device. Furthermore, the SQW device has a superior modulation bandwidth of 424 MHz with a data transmission rate of 800 Mbit/s at an injection current density of 2000 A/cm². These results demonstrate that InGaN-based SQW red micro-LEDs hold great promise for realizing full-color micro-display and visible light communication applications.

Keywords: Micro-LED; Red InGaN-based LED; Visible light communication.

Abstract

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