Controlling both the spectral bandwidth and directionality of emitted thermal radiation is a fundamental challenge in contemporary photonics. Recent work has shown that materials with a spatial gradient in the frequency range of their epsilon-near-zero (ENZ) response can support broad spectrum directionality in their emissivity, enabling high total radiance to specific angles of incidence. However, this capability is limited spectrally and directionally by the availability of materials with phonon-polariton resonances over long-wave infrared wavelengths. Here, an approach is designed and experimentally demonstrated using doped III-V semiconductors that can simultaneously tailor spectral peak, bandwidth, and directionality of infrared emissivity. InAs-based gradient ENZ photonic structures that exhibit broadband directional emission with varying spectral bandwidths and directional ranges as a function of their doping concentration profile and thickness are epitaxially grown and characterized. Due to its easy-to-fabricate geometry, it is believed that this approach provides a versatile photonic platform to dynamically control broadband spectral and directional emissivity for a range of emerging applications in heat transfer and infrared sensing.
Keywords: broadband; doped semiconductors; gradient ENZ materials; nanophotonics; plasmonics; thermal emission.
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