Optimization of Ternary InxGa1-xN Quantum Wells on GaN Microdisks for Full-Color GaN Micro-LEDs

Yu-Chung Lin; Ikai Lo; Cheng-Da Tsai; Ying-Chieh Wang; Hui-Chun Huang; Chu-An Li; Mitch M C Chou; Ting-Chang Chang

doi:10.3390/nano13131922

Optimization of Ternary In_xGa_1-xN Quantum Wells on GaN Microdisks for Full-Color GaN Micro-LEDs

Nanomaterials (Basel). 2023 Jun 23;13(13):1922. doi: 10.3390/nano13131922.

Authors

Yu-Chung Lin¹, Ikai Lo¹, Cheng-Da Tsai¹, Ying-Chieh Wang², Hui-Chun Huang³, Chu-An Li³, Mitch M C Chou³, Ting-Chang Chang¹

Affiliations

¹ Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan.
² Center for Nanoscience and Nanotechnology, National Sun Yat-sen University, Kaohsiung 80424, Taiwan.
³ Department of Materials and Optoelectronic Science, National Sun Yat-sen University, Kaohsiung 80424, Taiwan.

Abstract

Red, green, and blue light In_xGa_1-xN multiple quantum wells have been grown on GaN/γ-LiAlO₂ microdisk substrates by plasma-assisted molecular beam epitaxy. We established a mechanism to optimize the self-assembly growth with ball-stick model for In_xGa_1-xN multiple quantum well microdisks by bottom-up nanotechnology. We showed that three different red, green, and blue lighting micro-LEDs can be made of one single material (In_xGa_1-xN) solely by tuning the indium content. We also demonstrated that one can fabricate a beautiful In_xGa_1-xN-QW microdisk by choosing an appropriate buffer layer for optoelectronic applications.

Keywords: InxGa1-xN-based quantum wells (QW); full-color GaN micro-LEDs; plasma-assisted molecular beam epitaxy (PAMBE).

Grants and funding

109-2124-M-110-002-/National science and technology council of Taiwan