X-ray Detectors Based on Ga2O3 Microwires

Chongyang Zhang; Wenjie Dou; Xun Yang; Huaping Zang; Yancheng Chen; Wei Fan; Shaoyi Wang; Weimin Zhou; Xuexia Chen; Chongxin Shan

doi:10.3390/ma16134742

X-ray Detectors Based on Ga₂O₃ Microwires

Materials (Basel). 2023 Jun 30;16(13):4742. doi: 10.3390/ma16134742.

Authors

Chongyang Zhang¹, Wenjie Dou¹, Xun Yang¹, Huaping Zang¹, Yancheng Chen¹, Wei Fan², Shaoyi Wang², Weimin Zhou², Xuexia Chen^{1

3}, Chongxin Shan¹

Affiliations

¹ Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China.
² Science and Technology on Plasma Physics Laboratory, Laser Fusion Research Center, China Academy of Engineering Physics, Mianyang 621900, China.
³ School of Materials Science and Engineering, Henan University of Technology, Zhengzhou 450001, China.

Abstract

X-ray detectors have numerous applications in medical imaging, industrial inspection, and crystal structure analysis. Gallium oxide (Ga₂O₃) shows potential as a material for high-performance X-ray detectors due to its wide bandgap, relatively high mass attenuation coefficient, and resistance to radiation damage. In this study, we present Sn-doped Ga₂O₃ microwire detectors for solar-blind and X-ray detection. The developed detectors exhibit a switching ratio of 1.66 × 10² under X-ray irradiation and can operate stably from room temperature to 623 K, which is one of the highest reported operating temperatures for Ga₂O₃ X-ray detectors to date. These findings offer a promising new direction for the design of Ga₂O₃-based X-ray detectors.

Keywords: Ga2O3; X-ray; detector; microwire; solar-blind.

Abstract

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