As semiconductor chips have been integrated to enhance their performance, a low-dielectric-constant material, SiCOH, with a relative dielectric constant k ≤ 3.5 has been widely used as an intermetal dielectric (IMD) material in multilevel interconnects to reduce the resistance-capacitance delay. Plasma-polymerized tetrakis(trimethylsilyoxy)silane (ppTTMSS) films were created using capacitively coupled plasma-enhanced chemical vapor deposition with deposition plasma powers ranging from 20 to 60 W and then etched in CF4/O2 plasma using reactive ion etching. No significant changes were observed in the Fourier-transform infrared spectroscopy (FTIR) spectra of the ppTTMSS films after etching. The refractive index and dielectric constant were also maintained. As the deposition plasma power increased, the hardness and elastic modulus increased with increasing ppTTMSS film density. The X-ray photoelectron spectroscopy (XPS) spectra analysis showed that the oxygen concentration increased but the carbon concentration decreased after etching owing to the reaction between the plasma and film surface. With an increase in the deposition plasma power, the hardness and elastic modulus increased from 1.06 to 8.56 GPa and from 6.16 to 52.45 GPa. This result satisfies the hardness and elastic modulus exceeding 0.7 and 5.0 GPa, which are required for the chemical-mechanical polishing process in semiconductor multilevel interconnects. Furthermore, all leakage-current densities of the as-deposited and etched ppTTMSS films were measured below 10-6 A/cm2 at 1 MV/cm, which is generally acceptable for IMD materials.
Keywords: intermetal dielectric; low dielectric material; plasma-enhanced chemical-vapor deposition; reactive ion etching; tetrakis(trimethylsilyoxy)silane.