Scalable production and integration techniques for van der Waals (vdW) layered materials are vital for their implementation in next-generation nanoelectronics. Among available approaches, perhaps the most well-received is atomic layer deposition (ALD) due to its self-limiting layer-by-layer growth mode. However, ALD-grown vdW materials generally require high processing temperatures and/or additional postdeposition annealing steps for crystallization. Also, the collection of ALD-producible vdW materials is rather limited by the lack of a material-specific tailored process design. Here, we report the annealing-free wafer-scale growth of monoelemental vdW tellurium (Te) thin films using a rationally designed ALD process at temperatures as low as 50 °C. They exhibit exceptional homogeneity/crystallinity, precise layer controllability, and 100% step coverage, all of which are enabled by introducing a dual-function co-reactant and adopting a so-called repeating dosing technique. Electronically, vdW-coupled and mixed-dimensional vertical p-n heterojunctions with MoS2 and n-Si, respectively, are demonstrated with well-defined current rectification as well as spatial uniformity. Additionally, we showcase an ALD-Te-based threshold switching selector with fast switching time (∼40 ns), selectivity (∼104), and low Vth (∼1.3 V). This synthetic strategy allows the low-thermal-budget production of vdW semiconducting materials in a scalable fashion, thereby providing a promising approach for monolithic integration into arbitrary 3D device architectures.
Keywords: 2D materials; atomic layer deposition; nanoelectronics; tellurium; thin-film growth; vdW heterostructures.