This paper presents a novel method for the performance of an all-silicon accelerometer by adjusting the ratio of the Si-SiO2 bonding area, and the Au-Si bonding area in the anchor zone, with the aim of eliminating stress in the anchor region. The study includes the development of an accelerometer model and simulation analysis which demonstrates the stress maps of the accelerometer under different anchor-area ratios, which have a strong impact on the performance of the accelerometer. In practical applications, the deformation of the comb structure fixed by the anchor zone is influenced by the stress in the anchor region, causing a distorted nonlinear response signal. The simulation results demonstrate that when the area ratio of the Si-SiO2 anchor zone to the Au-Si anchor zone decreases to 0.5, the stress in the anchor zone decreases significantly. Experimental results reveal that the full-temperature stability of zero-bias is optimized from 133 μg to 46 μg when the anchor-zone ratio of the accelerometer decreases from 0.8 to 0.5. At the same time, the full-temperature stability of the scale factor is optimized from 87 ppm to 32 ppm. Furthermore, zero-bias full-temperature stability and scale factor full-temperature stability are improved by 34.6% and 36.8%, respectively.
Keywords: MEMS accelerometer; anchor zone; response signal; stress cancellation.