The semiconductor and display manufacturing process requires high precision. Therefore, inside the equipment, fine impurity particles affect the yield rate of production. However, since most manufacturing processes are performed under high-vacuum conditions, it is difficult to estimate particle flow with conventional analytical tools. In this study, high-vacuum flow was analyzed using the direct simulation Monte Carlo (DSMC) method, and various forces acting on fine particles in a high-vacuum flow field were calculated. To compute the computationally intensive DSMC method, GPU-based computer unified device architecture (CUDA) technology was used. The force acting on the particles in the high-vacuum rarefied gas region was verified using the results of previous studies, and the results were derived for the difficult-to-experiment region. An ellipsoid shape with an aspect ratio rather than a spherical shape was also analyzed. The change in drag force according to various aspect ratios was analyzed and compared with the results of the spherical shape under the same flow conditions.
Keywords: DSMC; drag coefficient; ellipsoidal particle; nanoparticle.