Optical upconversion via a multiphoton absorption process converts incoherent low-energy photons to shorter wavelengths. In this contribution, we report a solid-state thin film for infrared-to-visible upconversion composed of plasmonic/TiO2 interfaces. When excited at λ = 800 nm, three photons are absorbed, leading to the excitation of TiO2 trap states into an emissive state in the visible domain. The plasmonic nanoparticle enhances the light absorption capabilities of the semiconductor, increasing emission efficiency by 20 times. We demonstrate that the plasmonic nanoparticle only changes the optical absorption of the semiconductor; i.e., the process is purely photonic. The process occurs in the ultrafast domain (<10 ps), contrasting with molecular triplet-triplet exciton annihilation, the commonly used method in photon upconversion, in the nano- to microsecond time scales. The process utilizes pre-existing trap states within the semiconductor bandgap and involves three-photon absorption.