Performance optimization of In(Ga)As quantum dot intermediate band solar cells

Guiqiang Yang; Wen Liu; Yidi Bao; Xiaoling Chen; Chunxue Ji; Bo Wei; Fuhua Yang; Xiaodong Wang

doi:10.1186/s11671-023-03839-z

Performance optimization of In(Ga)As quantum dot intermediate band solar cells

Discov Nano. 2023 Apr 20;18(1):67. doi: 10.1186/s11671-023-03839-z.

Authors

Guiqiang Yang^{1

2}, Wen Liu^{1

2}, Yidi Bao^{1

2}, Xiaoling Chen^{1

2}, Chunxue Ji^{1

2}, Bo Wei^{1

3}, Fuhua Yang^{1

2}, Xiaodong Wang^{4

5

6

7}

Affiliations

¹ Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
² Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China.
³ School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing, 100049, China.
⁴ Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China. xdwang@semi.ac.cn.
⁵ Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China. xdwang@semi.ac.cn.
⁶ School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing, 100049, China. xdwang@semi.ac.cn.
⁷ Beijing Engineering Research Center of Semiconductor Micro-Nano Integrated Technology, Beijing, 100083, China. xdwang@semi.ac.cn.

Abstract

Quantum dot intermediate band solar cell (QD-IBSC) has high efficiency theoretically. It can absorb photons with energy lower than the bandgap of the semiconductor through the half-filled intermediate band, extending the absorption spectrum of the cell. However, issues in the IBSC, such as the strain around multi-stacking QDs, low thermal excitation energy, and short carrier lifetime, lead to its low conversion efficiency. In recent years, many efforts have been made from different aspects. In this paper, we focus on In(Ga)As QD-IBSC, list the experimental technologies used to improve the performance of the cell and review the recent research progress. By analyzing the effects of different technologies on conversion efficiency, the development direction of the In(Ga)As QD-IBSC in the future is proposed.

Keywords: Carrier lifetime; In(Ga)As quantum dot; Intermediate band solar cell; Strain; Thermal excitation.

Publication types

Review

Abstract

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