Semiconductor mode-locked optical frequency comb (ML-OFC) sources with extremely high repetition rates are central to many high-frequency applications, such as dense wavelength-division multiplexing. Dealing with distortion-free amplification of ultra-fast pulse trains from such ML-OFC sources in high-speed data transmission networks requires the deployment of semiconductor optical amplifiers (SOAs) with ultrafast gain recovery dynamics. Quantum dot (QD) technology now lies at the heart of many photonic devices/systems owing to their unique properties at the O-band, including low alpha factor, broad gain spectrum, ultrafast gain dynamics, and pattern-effect free amplification. In this swork, we report on ultrafast and pattern-free amplification of ∼100 GHz pulsed trains from a passively ML-OFC and up to 80 Gbaud/s non-return-to-zero (NRZ) data transmission using an SOA. Most significantly, both key photonic devices presented in this work are fabricated from identical InAs/GaAs QD materials operating at O-band, which paves the way for future advanced photonic chips, where ML-OFCs could be monolithically integrated with SOAs and other photonic components, all originated from the same QD-based epi-wafer.