Highly crystalline double-walled boron nitride nanotubes (DWBNNTs ∼60%) were synthesized from ammonia borane (AB; H3B-NH3) precursors using a high-temperature thermal plasma method. The differences between the synthesized BNNTs using the hexagonal boron nitride (h-BN) precursor and AB precursor were compared using various techniques such as thermogravimetric analysis, X-ray diffraction, Fourier transform infrared spectroscopy, Raman spectroscopy, scanning electron microscopy, transmission electron microscopy, and in situ optical emission spectroscopy (OES). The synthesized BNNTs were longer and had fewer walls when the AB precursor was used than when the conventional method was used (with the h-BN precursor). The production rate significantly improved from ∼20 g/h (h-BN precursor) to ∼50 g/h (AB precursor), and the content of amorphous boron impurities was significantly reduced, implying a self-assembly mechanism of BN radicals rather than the conventional mechanism involving boron nanoballs. Through this mechanism, the BNNT growth, which was accompanied by an increased length, a decreased diameter, and a high growth rate, could be understood. The findings were also supported by in situ OES data. Considering the increased production yield, this synthesis method using AB precursors is expected to make an innovative contribution to the commercialization of BNNTs.
© 2023 The Authors. Published by American Chemical Society.