Flexible, Transparent, and Wafer-Scale Artificial Synapse Array Based on TiOx /Ti3 C2 Tx Film for Neuromorphic Computing

Junhua Huang; Shaodian Yang; Xin Tang; Leilei Yang; Wenjun Chen; Zibo Chen; Xinming Li; Zhiping Zeng; Zikang Tang; Xuchun Gui

doi:10.1002/adma.202303737

Flexible, Transparent, and Wafer-Scale Artificial Synapse Array Based on TiO_x /Ti₃ C₂ T_x Film for Neuromorphic Computing

Adv Mater. 2023 Aug;35(33):e2303737. doi: 10.1002/adma.202303737. Epub 2023 Jul 4.

Authors

Junhua Huang¹, Shaodian Yang¹, Xin Tang¹, Leilei Yang^{1

2}, Wenjun Chen³, Zibo Chen¹, Xinming Li⁴, Zhiping Zeng⁵, Zikang Tang⁶, Xuchun Gui¹

Affiliations

¹ State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, China.
² Department of Physics, Guangxi Minzu University, Nanning, 530006, China.
³ School of Electronic Information Engineering, Foshan University, Foshan, 528000, P. R. China.
⁴ Guangdong Provincial Key Laboratory of Nanophotonic Functional Materials and Devices, School of Information and Optoelectronic Science and Engineering, South China Normal University, Guangzhou, 510006, China.
⁵ School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou, 510275, China.
⁶ Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macau, 999078, China.

PMID: 37339620
DOI: 10.1002/adma.202303737

Abstract

A high-density neuromorphic computing memristor array based on 2D materials paves the way for next-generation information-processing components and in-memory computing systems. However, the traditional 2D-materials-based memristor devices suffer from poor flexibility and opacity, which hinders the application of memristors in flexible electronics. Here, a flexible artificial synapse array based on TiO_x /Ti₃ C₂ T_x film is fabricated by a convenient and energy-efficient solution-processing technique, which realizes high transmittance (≈90%) and oxidation resistance (>30 days). The TiO_x /Ti₃ C₂ T_x memristor shows low device-to-device variability, long memory retention and endurance, a high ON/OFF ratio, and fundamental synaptic behavior. Furthermore, satisfactory flexibility (R = 1.0 mm) and mechanical endurance (10⁴ bending cycles) of the TiO_x /Ti₃ C₂ T_x memristor are achieved, which is superior to other film memristors prepared by chemical vapor deposition. In addition, high-precision (>96.44%) MNIST handwritten digits recognition classification simulation indicates that the TiO_x /Ti₃ C₂ T_x artificial synapse array holds promise for future neuromorphic computing applications, and provides excellent high-density neuron circuits for new flexible intelligent electronic equipment.

Keywords: 2D materials; TiOx/Ti3C2Tx heterostructure; flexible artificial synapse arrays; neuromorphic computing.

Abstract

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