2D van der Waals (vdW) transition metal di-chalcogenides (TMDs) have garnered significant attention in the nonvolatile memory field for their tunable electrical properties, scalability, and potential for phase engineering. However, their complex switching mechanism and complicated fabrication methods pose challenges for mass production. Sputtering is a promising technique for large-area 2D vdW TMD fabrication, but the high melting point (typically Tm > 1000 °C) of TMDs requires elevated temperatures for good crystallinity. This study focuses on the low-Tm 2D vdW TM tetra-chalcogenides and identifies NbTe4 as a promising candidate with an ultra-low Tm of around 447 °C (onset temperature). As-grown NbTe4 forms an amorphous phase upon deposition that can be crystallized by annealing at temperatures above 272 °C. The simultaneous presence of a low Tm and a high crystallization temperature Tc can resolve important issues facing current phase-change memory compounds, such as high Reset energies and poor thermal stability of the amorphous phase. Therefore, NbTe4 holds great promise as a potential solution to these issues.
Keywords: 2D transition-metal tetra-chalcogenide; NbTe4 thin film; non-volatile memory; phase-change materials.
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