In recent years, polarization-sensitive photodiodes based on one-dimensional/two-dimensional (1D/2D) van der Waals (vdWs) heterostructures have garnered significant attention due to the high specific surface area, strong orientation degree of 1D structures, and large photo-active area and mechanical flexibility of 2D structures. Therefore, they are applicable in wearable electronics, electrical-driven lasers, image sensing, optical communication, optical switches, etc. Herein, 1D Bi2O2Se nanowires have been successfully synthesized via chemical vapor deposition. Impressively, the strongest Raman vibration modes can be achieved along the short edge (y-axis) of Bi2O2Se nanowires with high crystalline quality, which originate from Se and Bi vacancies. Moreover, the Bi2O2Se/MoSe2 photodiode designed with type-II band alignment demonstrates a high rectification ratio of 103. Intuitively, the photocurrent peaks are mainly distributed in the overlapped region under the self-powered mode and reverse bias, within the wavelength range of 400-nm. The resulting device exhibits excellent optoelectrical performances, including high responsivities (R) and fast response speed of 656 mA/W and 350/380 μs (zero bias) and 17.17 A/W and 100/110 μs (-1 V) under 635 nm illumination, surpassing the majority of reported mixed-dimensional photodiodes. The most significant feature of our photodiode is its highest photocurrent anisotropic ratio of ∼2.2 (-0.8 V) along the long side (x-axis) of Bi2O2Se nanowires under 635 nm illumination. The above results reveal a robust and distinctive correlation between structural defects and polarized orientation for 1D Bi2O2Se nanowires. Furthermore, 1D Bi2O2Se nanowires appear to be a great potential candidate for high-performance rectifiers, polarization-sensitive photodiodes, and phototransistors based on mixed vdWs heterostructures.
Keywords: Bi2O2Se nanowire; MoSe2; mixed-dimensional van der Waals heterostructure; photocurrent anisotropic ratio; type-II band alignment.