MnBi2Te4, an antiferromagnetic topological insulator, was theoretically predicted to have a gapped surface state on its (111) surface. However, a much smaller gapped or even gapless surface state has been observed experimentally, which is thought to be caused by the defects in MnBi2Te4. Here, we have theoretically identified the antisite MnBi and BiMn as dominant defects and revealed their evolution during the phase transition from MnTe/Bi2Te3 to MnBi2Te4. We found that the complete elimination of MnBi and BiMn defects in MnBi2Te4 by simple annealing is almost impossible due to the high migration barrier in kinetics. Moreover, the gap of the Dirac point-related bands in a MnBi2Te4 monolayer would be eliminated with an increasing concentration of MnBi and BiMn defects, which could explain the experimentally unobserved large-gap surface state in MnBi2Te4. Our results provide an insight into the theoretical understanding of the quality and the experimentally measured topological properties of the synthesized MnBi2Te4.
Keywords: Dirac point-related bands; MnBi2Te4; antisite defect; interlayer exchange; kinetic barrier.